A photodiode is again a special purpose p-n junction diode fabricated with a transparent window to allow light to fall on the diode. It is operated under reverse bias.
When the photodiode is illuminated with light (photons) with energy (hν) greater than the energy gap (Eg) of the semiconductor, then electron-hole pairs are generated due to the absorption of photons.
The diode is fabricated such that the generation of e-h pairs takes place in or near the depletion region of the diode. Due to the electric field of the junction, electrons and holes are separated before they recombine.
The direction of the electric field is such that electrons reach n-side and holes reach p-side. Electrons are collected on n-side and holes are collected on p-side giving rise to an emf.
When an external load is connected, current flows. The magnitude of the photocurrent depends on the intensity of incident light (photocurrent is proportional to incident light intensity).
An illuminated photodiode under reverse biasI-V characteristics of a photodiode for different illumination intensity I4 > I3 > I2 > I1
